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July 1996
NDT455N N-Channel Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications such as DC motor control and DC/DC conversion where fast switching, low in-line power loss, and resistance to transients are needed.
Features
11.5 A, 30 V. RDS(ON) = 0.015 @ VGS = 10 V RDS(ON) = 0.02 @ VGS = 4.5 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package.
________________________________________________________________________________
D
D
G
D
S
G
S
Absolute Maximum Ratings
Symbol VDSS VGSS ID Parameter Drain-Source Voltage Gate-Source Voltage Drain Current
T A = 25C unless otherwise noted
NDT455N 30 20
(Note 1a)
Units V V A
- Continuous - Pulsed
11.5 40
PD
Maximum Power Dissipation
(Note 1a) (Note 1b) (Note 1c)
3 1.3 1.1 -65 to 150
W
TJ,TSTG
Operating and Storage Temperature Range
C
THERMAL CHARACTERISTICS RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1)
42 12
C/W C/W
(c) 1997 Fairchild Semiconductor Corporation
NDT455N Rev.F
Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 A VDS = 24 V, VGS = 0 V TJ = 55C Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V VDS = VGS, ID = 250 A TJ = 125C Static Drain-Source On-Resistance VGS = 10 V, ID = 11.5 A TJ = 125C VGS = 4.5 V, ID = 10 A ID(on) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd On-State Drain Current VGS = 10 V , VDS = 5 V VGS = 4.5 V, VDS = 5 V Forward Transconductance VGS = 10 V, ID = 11.5 A VDS = 15, VGS = 0 V, f = 1.0 MHz DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance 1220 715 280 pF pF pF 30 15 26 S 1 0.7 1.5 0.9 0.013 0.019 0.018 30 1 10 100 -100 V A A nA nA
ON CHARACTERISTICS (Note 2) Gate Threshold Voltage 3 2.2 0.015 0.03 0.02 A V
SWITCHING CHARACTERISTICS (Note 2) Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS = 10 V, ID = 11.5 A, VGS = 10 V VDD = 15 V, ID = 1 A, VGEN = 10 V, RGEN = 6 11 16 48 40 43 4 11 20 30 80 70 61 ns ns ns ns nC nC nC
NDT455N Rev.F
Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD trr
Notes: 1.
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time PD (t) =
T J -T A R JA(t)
2.5 0.845 1.2 140
A V ns
VGS = 0 V, IS = 2.5 A (Note 2) VGS = 0 V, IF = 2.5 A dIF/dt = 100 A/s
=
T J -T A R JC +R CA (t)
= I 2 (t) x R DS(ON)@T J D
RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the
solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is defined by users. For general reference: Applications on 4.5"x5" FR-4 PCB under still air environment, typical RJA is found to be: a. 42oC/W with 1 in2 of 2 oz copper mounting pad. b. 95oC/W with 0.066 in2 of 2 oz copper mounting pad. c. 110oC/W with 0.0123 in2 of 2 oz copper mounting pad.
1a
1b
1c
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
NDT455N Rev.F
Typical Electrical Characteristics
40 , DRAIN-SOURCE CURRENT (A)
2.5
4.0
R DS(on) , NORMALIZED
32
5.0 3.5
DRAIN-SOURCE ON-RESISTANCE
VGS =10V 6.0
4.5
2
VGS = 3.5V 4.0
24
1.5
4.5 5.0 6.0 10
16
3.0
8
1
I 0 0 0.5 1 1.5 2 2.5 3 VDS , DRAIN-SOURCE VOLTAGE (V)
D
0.5
0
8
16 24 I D , DRAIN CURRENT (A)
32
40
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Gate Voltage and Drain Current.
1.5
2.5 V GS = 10V R DS(on) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE I D = 11.5A
VGS = 10V
2
DRAIN-SOURCE ON-RESISTANCE
1.25
R DS(ON), NORMALIZED
1.5
T = 125C J 25C
1
1
0.75
-55C
0.5
0.5 -50
0
-25 0
J
25
50
75
100
125
150
0
8
D
16
24
32
40
T , JUNCTION TEMPERATURE (C)
I , DRAIN CURRENT (A)
Figure 3. On-Resistance Variation with Temperature.
Figure 4. On-Resistance Variation with Drain Current and Temperature.
V DS = 10V
30
T = -55C J 25C 125C VGS(th) , NORMALIZED
GATE-SOURCE THRESHOLD VOLTAGE
40
1.4
1.2
VDS = VGS I D = 250A
I D , DRAIN CURRENT (A)
1
20
0.8
10
0.6
0 0.8
1.6 V
GS
2.4
3.2
4
0.4 -50
-25
0
J
25
50
75
100
125
150
, GATE TO SOURCE VOLTAGE (V)
T , JUNCTION TEMPERATURE (C)
Figure 5. Transfer Characteristics.
Figure 6. Gate Threshold Variation with Temperature.
NDT455N Rev.F
Typical Electrical Characteristics
1.1 DRAIN-SOURCE BREAKDOWN VOLTAGE
40
I D = 250A
I S , REVERSE DRAIN CURRENT (A) 1.08 1.06 1.04 1.02 1 0.98 0.96 0.94 -50
10
V GS = 0V
, NORMALIZED
1
T J = 125C
0.1
25C -55C
BV
DSS
0.01
0.001
-25
0 T
J
25 50 75 100 , JUNCTION TEMPERATURE (C)
125
150
0.0001 0 0.2 0.4 0.6 0.8 1 1.2 V SD , BODY DIODE FORWARD VOLTAGE (V) 1.4
Figure 7. Breakdown Voltage Variation with Temperature.
Figure 8. Body Diode Forward Voltage Variation with Current and Temperature.
4000 V GS , GATE-SOURCE VOLTAGE (V)
10
I D = 11.5A
8
VDS = 5.V 10V 15V
2000 CAPACITANCE (pF)
C iss
1000 800 500 300 200
6
C oss
4
f = 1 MHz V GS = 0V
0.2 V
DS
C rss
2
100 0.1
0.5
1
2
5
10
20
30
0 0 10 20 30 40 50 Q g , GATE CHARGE (nC)
, DRAIN TO SOURCE VOLTAGE (V)
Figure 9. Capacitance Characteristics.
Figure 10. Gate Charge Characteristics.
t on
V DD V IN
D
t off tr
90%
t d(on)
RL V OUT
DUT
t d(off)
90%
tf
VGS
VOUT
10%
R GEN
10%
INVERTED
G
90%
S
V IN
10%
50%
50%
PULSE WIDTH
Figure 11. Switching Test Circuit.
Figure 12. Switching Waveforms.
NDT455N Rev.F
Typical Thermal Characteristics
g FS, TRANSCONDUCTANCE (SIEMENS) 40
STEADY-STATE POWER DISSIPATION (W) 3.5
V DS =10V
30
TJ = -55C 25C 125C
1a
3
2.5
20
2
1.5
1b 1c
10
1
4.5"x5" FR-4 Board TA = 2 5 C Still Air
o
0
0
6
D
12
18
24
30
0.5 0 0.2 0.4 0.6 0.8 2oz COPPER MOUNTING PAD AREA (in 2 ) 1
I , DRAIN CURRENT (A)
Figure 13. Transconductance Variation with Drain Current and Temperature.
Figure 14. SOT-223 Maximum Steady- State Power Dissipation versus Copper Mounting Pad Area.
I D , STEADY-STATE DRAIN CURRENT (A)
14
60 30
1a
I D , DRAIN CURRENT (A)
12
10 5
R
(O DS
N)
LIM
IT
100 us 1m s 10m s 100 ms 1s 10s DC
10
1
8
1c
1b 4.5"x5" FR-4 Board o TA = 25 C Still Air VGS = 10V
0.1 0.05
6
VGS = 10V SINGLE PULSE RJA =See Note1c TA = 25C
0.5 1 2
4 0 0.2 0.4 0.6 0.8 1 2oz COPPER MOUNTING PAD AREA (in 2 )
0.01 0.1
5
10
30
50
VDS , DRAIN-SOURCE VOLTAGE (V)
Figure 15. Maximum Steady-State DrainCurrent versus Copper Mounting Pad Area.
1 0.5
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE D = 0.5 0.2 0.1 0.05 0.02 0.01
Figure 16. Maximum Safe Operating Area.
0.2 0.1 0.05 0.02 0.01 0.005
R JA (t) = r(t) * R JA R JA = See Note 1 c
P(pk)
t1
t2
Single Pulse
0.002 0.001 0.0001 0.001 0.01 0.1 t 1 , TIME (sec) 1
TJ - TA = P * R (t) JA Duty Cycle, D = t 1 / t 2
10 100 300
Figure 17. Typical Transient Thermal Impedance Curve.
Remark: Thermal characterization performed under the conditions of Note 1c. Should better thermal design employs, RJA will be lower and reach thermal equivalent sooner.
NDT455N Rev.F
SOT-223 Tape and Reel Data and Package Dimensions
SOT-223 Packaging Configuration: Figure 1.0
Customized Label
Packaging Description:
SOT-223 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). Other option comes in 500 units per 7" or 177cm diameter reel. This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped.
F63TNR Label Antistatic Cover Tape
Static Dissipative Embossed Carrier Tape
F852 014
SOT-223 Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no flow code) TNR 2,500 13" Dia 343x64x343 5,000 0.1246 0.7250 D84Z TNR 500 7" Dia 184x187x47 1,000 0.1246 0.1532
F852 014
F852 014
F852 014
SOT-223 Unit Orientation
343mm x 342mm x 64mm Intermediate box for Standard
F63TNR Label
F63TNR Label 184mm x 184mm x 47mm Pizza Box for D84Z Option
F63TNR Label sample
LOT: CBVK741B019 FSID: PN2222A QTY: 3000 SPEC:
SOT-223 Tape Leader and Trailer Configuration: Figure 2.0
D/C1: D9842 D/C2:
QTY1: QTY2:
SPEC REV: CPN: N/F: F
(F63TNR)3
Carrier Tape Cover Tape
Components Trailer Tape 300mm minimum or 38 empty pockets Leader Tape 500mm minimum or 62 empty pockets
September 1999, Rev. B
SOT-223 Tape and Reel Data and Package Dimensions, continued
SOT-223 Embossed Carrier Tape Configuration: Figure 3.0
T E1
P0
D0
F K0 Wc B0 E2 W
Tc A0 P1 D1
User Direction of Feed
Dimensions are in millimeter Pkg type SOT-223 (12mm)
A0
6.83 +/-0.10
B0
7.42 +/-0.10
W
12.0 +/-0.3
D0
1.55 +/-0.05
D1
1.50 +/-0.10
E1
1.75 +/-0.10
E2
10.25 min
F
5.50 +/-0.05
P1
8.0 +/-0.1
P0
4.0 +/-0.1
K0
1.88 +/-0.10
T
0.292 +/0.0130
Wc
9.5 +/-0.025
Tc
0.06 +/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C).
20 deg maximum Typical component cavity center line
0.5mm maximum
B0 20 deg maximum component rotation
0.5mm maximum
Sketch A (Side or Front Sectional View)
Component Rotation
A0 Sketch B (Top View)
Typical component center line
Sketch C (Top View)
Component lateral movement
SOT-223 Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A Max
Dim A max
Dim N
See detail AA
7" Diameter Option
B Min Dim C See detail AA W3
Dim D min
13" Diameter Option
W2 max Measured at Hub DETAIL AA
Dimensions are in inches and millimeters
Tape Size
12mm
Reel Option
7" Dia
Dim A
7.00 177.8 13.00 330
Dim B
0.059 1.5 0.059 1.5
Dim C
512 +0.020/-0.008 13 +0.5/-0.2 512 +0.020/-0.008 13 +0.5/-0.2
Dim D
0.795 20.2 0.795 20.2
Dim N
5.906 150 7.00 178
Dim W1
0.488 +0.078/-0.000 12.4 +2/0 0.488 +0.078/-0.000 12.4 +2/0
Dim W2
0.724 18.4 0.724 18.4
Dim W3 (LSL-USL)
0.469 - 0.606 11.9 - 15.4 0.469 - 0.606 11.9 - 15.4
12mm
13" Dia
July 1999, Rev. B
SOT-223 Tape and Reel Data and Package Dimensions, continued
SOT-223 (FS PKG Code 47)
1:1
Scale 1:1 on letter size paper
Part Weight per unit (gram): 0.1246
September 1999, Rev. C
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
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No Identification Needed
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This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

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